LGS wafer

Typical Specifications

Orientation

Y- cut; Rotated Y-cut on 1°….2° /-0,02°

Diameter

25.4/50.8/76.2/100 ±0.3mm

Orientation Flat(OF)

Customized Perpendicular to X ±0.2°

Thickness

1-0.08 /-0.02mm

Frequency

2--20 MHz

Frequency accuracy at 25°C

/- 1000ppm

Surface

Double sides polished S/D:20/10

TTV

≤ 10um

WARP

≤ 25um

Edge Beveling

Edge Rounding

Forms

Bi-Plane parallel


Customization acceptable

Basic materials characteristics

Crystal Structure

P321 (D23)

Density

5,75 g/cm3

Melting Point

1475 oC

Mohs Hardness

6,5

Dielectric constants: ε11/ε0, ε33/ε0

18,9; 52,0

Coefficient of thermal expansion: α11, α33

5,11x10-6 /K ; 3,16x10-6 /K

Piezoelectric constants: e11, e14

- 0,43; 0,108 cm-2

Electromechanical coupling coefficients: k12, k26

0,16; 0,134 Nm-2

Elastic constants: c11, c33, c12, c13, c14, c44, c66

18,93; 26,24; 10,5; 9,53; 1,49; 5,38; 4,22*1010Nm-2

The possible applications

Langasite has excellent thermal, piezoelectric and dielectric properties and is resistant to chemical attack. Main applications include:
1. Surface Acoustic Wave Sensors for High Temperatures;
2.Balk Sensors for High Temperatures, Crystal Units and Filters;
3.Dielectric Wafer; Electrical Insulators;
4.Thin Film Deposition;
5.Transparent Electronic Substrate;
6.Superconductor Substrate

Langasite (La3Ga5SiO14) crystal wafer

LGS wafer
Fused Sillica wafer
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