LGS wafer
Typical Specifications
Orientation |
Y- cut; Rotated Y-cut on 1°….2° /-0,02° |
Diameter |
25.4/50.8/76.2/100 ±0.3mm |
Orientation Flat(OF) |
Customized Perpendicular to X ±0.2° |
Thickness |
1-0.08 /-0.02mm |
Frequency |
2--20 MHz |
Frequency accuracy at 25°C |
/- 1000ppm |
Surface |
Double sides polished S/D:20/10 |
TTV |
≤ 10um |
WARP |
≤ 25um |
Edge Beveling |
Edge Rounding |
Forms |
Bi-Plane parallel |
Customization acceptable
Crystal Structure |
P321 (D23) |
Density |
5,75 g/cm3 |
Melting Point |
1475 oC |
Mohs Hardness |
6,5 |
Dielectric constants: ε11/ε0, ε33/ε0 |
18,9; 52,0 |
Coefficient of thermal expansion: α11, α33 |
5,11x10-6 /K ; 3,16x10-6 /K |
Piezoelectric constants: e11, e14 |
- 0,43; 0,108 cm-2 |
Electromechanical coupling coefficients: k12, k26 |
0,16; 0,134 Nm-2 |
Elastic constants: c11, c33, c12, c13, c14, c44, c66 |
18,93; 26,24; 10,5; 9,53; 1,49; 5,38; 4,22*1010Nm-2 |
Langasite has excellent thermal, piezoelectric and dielectric properties and is resistant to chemical attack. Main applications include:
1. Surface Acoustic Wave Sensors for High Temperatures;
2.Balk Sensors for High Temperatures, Crystal Units and Filters;
3.Dielectric Wafer; Electrical Insulators;
4.Thin Film Deposition;
5.Transparent Electronic Substrate;
6.Superconductor Substrate
Langasite (La3Ga5SiO14) crystal wafer